BSP296 SOT-223

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.79 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.8 V

Maximum Drain Current |Id|: 1.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13.8 nC

Rise Time (tr): 7.9 nS

Drain-Source Capacitance (Cd): 53 pF

Maximum Drain-Source On-State Resistance (Rds): 0.7 Ohm

Package: SOT-223