IRF9530NPBF

Technology: Si

Mounting Style: Through Hole

Package/Case: TO-220-3

Transistor Polarity: P-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 100 V

Id - Continuous Drain Current: 14 A

Rds On - Drain-Source Resistance: 200 mOhms

Vgs - Gate-Source Voltage: - 20 V, 20 V

Vgs th - Gate-Source Threshold Voltage: 4 V

Qg - Gate Charge: 38.7 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: 175 C

Pd - Power Dissipation: 79 W